Interfacial ferroelectricity in marginally twisted 2D semiconductors

Interfacial ferroelectricity in marginally twisted 2D semiconductors Abstract Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS 2 . These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelect...